Understanding noise measurements in MOSFETs: The role of traps structural relaxation

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 73-79

  Veksler, D ^a   Bersuker, G ^a   Rumyantsev, S ^b   Shur, M ^b   Park, H ^a   Young, C ^a   Lim, K Y ^a   Taylor, W ^a   Jammy, R ^a  

^a SEMATECH   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Configurational relaxation of traps; Electrical noise; MOSFET characterization; Random telegraph signal

Indexed keywords

1/F NOISE; ATOMIC STRUCTURE; CHARGE TRAPPING/DETRAPPING; CONFIGURATIONAL RELAXATION OF TRAPS; ELECTRICAL NOISE; MAJOR FACTORS; MEASUREMENT RESULTS; MOSFET CHARACTERIZATION; MOSFETS; NOISE MEASUREMENTS; OXIDE TRAPS; RANDOM TELEGRAPH SIGNALS;

MOSFET DEVICES; STRUCTURAL RELAXATION;

TELEGRAPH;

EID: 77957918515     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488850     Document Type: Conference Paper

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