Charge pumping as a monitor of OFF-state TDDB in asymmetrically stressed transistors

IEEE Electron Device Letters

Volumn 30, Issue 9, 2009, Pages 972-974

  Varghese, Dhanoop ^a   Alam, Muhammad A ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Charge pumping (CP); Drain extended MOS (DeMOS); OFF state stress; Percolation model; Time dependent dielectric breakdown (TDDB); Voltage acceleration

Indexed keywords

CHARGE PUMPING (CP); DRAIN-EXTENDED MOS (DEMOS); OFF-STATE STRESS; PERCOLATION MODEL; TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB); VOLTAGE ACCELERATION;

ELECTRIC BREAKDOWN; GATE DIELECTRICS; GATES (TRANSISTOR); PERCOLATION (SOLID STATE); SOLVENTS;

PUMPS;

EID: 69949175963     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2026294     Document Type: Article

References (11)

1. B. E. Weir, P. J. Silverman, D. Monroe, K. S. Krisch, M. A. Alam, G. B. Alers, T. W. Sorsch, G. L. Timp, F. Baumann, C. T. Liu, Y. Ma, and D. Hwang, in, "Ultra-thin gate dielectrics: They break down, but do they fail?" in IEDM Tech. Dig., 1997, pp. 73-76.
2. M. A. Alam, J. Bude, and A. Ghetti, in, "Field acceleration for oxide breakdown - Can an accurate anode hole injection model resolve the E vs. 1/E controversy?" in Proc. Int. Reliab. Phys. Symp., 2000, pp. 21-26.
3. J. Sune, "New physics-based analytic approach to the thin-oxide breakdown statistics," IEEE Electron Device Lett., vol. 22, no. 6, pp. 296-298, Jun. 2001.
4. 2 and SiON dielectrics from low voltage stress-induced leakage current measurements," Microelectron. Reliab., vol. 48, no. 8/9, pp. 1171-1177, Aug./Sep. 2008.
5. T. Nigam and P. Peumans, "TDDB in the presence of interface states: Implications for the PMOS reliability margin," in IEDM Tech. Dig. 2008, pp. 783-786.
6. D. Varghese, H. Kufluoglu, V. Reddy, H. Shichijo, D. Mosher, S. Krishnan, and M. Ashraful Alam, "Off-state degradation in drain-extended NMOS transistors: Interface damage and correlation to dielectric breakdown," IEEE Trans. Electron Devices, vol. 54, no. 10, pp. 2669-2678, Oct. 2007.
7. D. Varghese, V. Reddy, H. Shichijo, D. Mosher, S. Krishnan, and M. A. Alam, "A comprehensive analysis of off-state stress in drain extended PMOS transistors: Theory and characterization of parametric degradation and dielectric failure," in Proc. Int. Reliab. Phys. Symp., 2008, pp. 566-574.
8. E. Wu, E. Nowak, and W. Lai, "Off-state mode TDDB reliability for ultra-thin gate oxides: New methodology and the impact of oxide thickness scaling," in Proc. Int. Reliab. Phys. Symp., 2004, pp. 84-94.
9. A. T. Krishnan and P. E. Nicollian, "Analytic extension of the cell-based oxide breakdown model to full percolation and its implications," in Proc. Int. Reliab. Phys. Symp., 2007, pp. 232-239.
10. M. A. Alam, D. Varghese, and B. Kaczer, "Theory of breakdown position determination by voltage- and current-ratio methods," IEEE Trans. Electron Devices, vol. 55, no. 11, pp. 3150-3158, Nov. 2008.
11. M. Masuduzzaman, A. E. Islam, and M. A. Alam, "Exploring the capability of multifrequency charge pumping in resolving location and energy levels of traps within dielectric," IEEE Trans. Electron Devices, vol. 55, no. 12, pp. 3421-3431, Dec. 2008.