The impact of partially scaled metal barrier shunting on failure criteria for copper electromigration resistance increase in 65nm technology

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 31-35

  Lee, Ki Don ^a   Park, Young Joon ^a   Hunter, Bill ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

65nm technology; Electromigration

Indexed keywords

65NM TECHNOLOGY; COPPER INTERCONNECTS; FAILURE CRITERIA (FC); R-SLOPE REGION (RSR);

ACTIVATION ENERGY; COPPER; ELECTRIC CURRENTS; ELECTRIC POWER SYSTEM INTERCONNECTION; ELECTROMIGRATION; FAILURE ANALYSIS;

ELECTRIC RESISTANCE;

EID: 28744446295     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. C.-K. Hu, Thin Solid Film, 260, 124 (1995)
2. C.-K. Hu, and J. M. E. Harper, Mater. Chem. Phys. 52, 5 (1998)
3. E. Liniger, L. Gignac, C.-K. Hu, and S. Kaldor, J. Appl. Phys. 92, 1803 (2002)
4. E. Liniger et al.., Appl. Phys. Lett. 92, 1803 (2002)
5. I. A. Blech, and C. Herring, Appl. Phys. Lett. 29, 131 (1976)
6. C.-K. Hu, R. Rosenberg, and K. Y. Lee, Appl. Phys. Lett. 74, 2945 (1999)
7. M. W. Lane, E. G. Liniger, and J. R. Lloyd, J. Appl. Phys. 93, 1417 (2003)
8. J. R. Black, IEEE Trans. Electron Devices, vol.ED-16, pp.338-347 (1969)
9. th Annual, 2002, pp. 322-326
10. K.-D. Lee, and P. S. Ho. IEEE Trans. Dev. Mat. Rel., 4, 237 (2004)
11. th Annual, 2001, pp. 341-349