Electromigration threshold in copper interconnects and consequences on lifetime extrapolations

Proceedings of the IEEE 2005 International Interconnect Technology Conference, IITC

Volumn , Issue , 2005, Pages 105-107

  Ney, D ^a,c   Federspiel, X ^b   Girault, V ^a   Thomas, O ^c   Gergaud, P ^c  

^a STMICROELECTRONICS   (France)

^b NXP SEMICONDUCTORS   (Netherlands)

^c AIX MARSEILLE UNIVERSITY   (France)

Author keywords

Black's model; Blech effect; Electromigration; Extrapolation; Threshold product

Indexed keywords

COPPER; CURRENT DENSITY; ELECTRIC CURRENTS; EXTRAPOLATION; INTEGRATED CIRCUITS; LARGE SCALE SYSTEMS; RELIABILITY;

BLACK'S MODEL; BLECH EFFECT; THRESHOLD PRODUCT;

ELECTROMIGRATION;

EID: 28244492992     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. I.A. Blech, "Electromigration in thin films on titanium nitride", J. Appl. Phys., 1976, 47, no4, pp. 1203-1208.
2. P. C. Wang, R.G. Filippi, "Electromigration threshold in copper interconnects", Appl. Phys. Lett., 2001, 78, pp. 3598-3600.
3. Ki Don Lee et al, "Electromigration threshold for Cu/low k interconnects", IITC Proc., 2003
4. J. R. Black, "Electromigration failure modes in Aluminium metallization for semiconductor devices", Proc. Of the IEEE, 1969, Vol. 57, no9, pp. 1587-1594.
5. J.J. Clement, "Electromigration modeling for integrated circuit interconnect reliability analysis", Trans. on Dev. and Mat. Reliab., 2001, 1, no1, pp. 33-42.
6. C. Hau-Riege et al, "The effect of low k on the electromigration reliability of Cu interconnects with different line lengths", IRPS Proc., 2003, pp. 173-177.
7. X. Federspiel, D.Ney, V.Girault, "Determination of the acceleration factor between wafer level and package level electromigration test", IRPS Proc., 2005, to be published
8. A.V. Varaigar et al, "Electromigration behavior of dual damscene Cu interconnects - Structure, width, and length dependence", Microelec. Reliab., 2004, 44, pp. 747-75.
9. L. Arnaud, "Electromigration threshold length effect in dual damascene copper oxide interconnects"
10. S. Thrasher et al, "Blech effect in single inlaid Cu interconnects", IITC Proc., 2001