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Volumn 47, Issue 9-11 SPEC. ISS., 2007, Pages 1784-1789

Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COOLING SYSTEMS; TEMPERATURE DISTRIBUTION; TEMPERATURE MEASUREMENT;

EID: 34548677751     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.07.071     Document Type: Article
Times cited : (23)

References (11)
  • 1
    • 33748041125 scopus 로고    scopus 로고
    • Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications
    • Castellazzi A., Ciappa M., Fichtner W., Lourdel G., and Mermet-Guyennet M. Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications. Microelectron Reliab 46 9-11 (2006) 1754-1759
    • (2006) Microelectron Reliab , vol.46 , Issue.9-11 , pp. 1754-1759
    • Castellazzi, A.1    Ciappa, M.2    Fichtner, W.3    Lourdel, G.4    Mermet-Guyennet, M.5
  • 3
    • 0031633633 scopus 로고    scopus 로고
    • Kraus R, Türkes P, Sigg J. Physics-based models of power semiconductor devices for the circuit simulator SPICE, In: Proc. PESC 98, IEEE power electronics specialists conference, Fukuoka, Japan, 1998.
  • 4
    • 0032071510 scopus 로고    scopus 로고
    • Status and Trends of Power Semiconductor Devices Models for Circuit Simulation
    • Kraus R., and Mattausch H.J. Status and Trends of Power Semiconductor Devices Models for Circuit Simulation. IEEE Trans Power Electron 13 3 (1998)
    • (1998) IEEE Trans Power Electron , vol.13 , Issue.3
    • Kraus, R.1    Mattausch, H.J.2
  • 6
    • 0035333734 scopus 로고    scopus 로고
    • Physically based compact device models for circuit modeling applications
    • Mawby P.A., Igic P.M., and Towers M.S. Physically based compact device models for circuit modeling applications. Microelectron J 32 (2002) 433-447
    • (2002) Microelectron J , vol.32 , pp. 433-447
    • Mawby, P.A.1    Igic, P.M.2    Towers, M.S.3
  • 8
    • 33748040759 scopus 로고    scopus 로고
    • New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions
    • Barlini D., Ciappa M., Castellazzi A., Mermet- Guyennet M., and Fichtner W. New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions. Microelectron Reliab 46 September (2006) 1772-1777
    • (2006) Microelectron Reliab , vol.46 , Issue.September , pp. 1772-1777
    • Barlini, D.1    Ciappa, M.2    Castellazzi, A.3    Mermet- Guyennet, M.4    Fichtner, W.5
  • 9
    • 34548669228 scopus 로고    scopus 로고
    • Maxwell 3D, User Manual.
  • 10
    • 34548701655 scopus 로고    scopus 로고
    • Lourdel G., "Méthodologie et outils de calcul numérique pour la prise en compte de la compatibilité électromagnétique des nouveaux prototypes des circuit intégrés de puissance," PhD-thesis, University of Toulouse III, 2005.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.