Dynamic avalanche in 3.3-kV Si power diodes

IEEE Transactions on Electron Devices

Volumn 46, Issue 4, 1999, Pages 781-786

  Domeij, Martin ^a,b   Breitholtz, Bo ^a   Hillkirk, Leonardo Martin ^a   Linnros, Jan ^a   Östling, Mikael ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ABB CORPORATE RESEARCH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; IMPACT IONIZATION; LASER PULSES; PLASMAS; SEMICONDUCTING SILICON; STABILITY; TEMPERATURE MEASUREMENT;

CARRIER PLASMA; DYNAMIC AVALANCHE; JUNCTION TERMINATION; REVERSE RECOVERY; SAFE OPERATING AREA; SILICON POWER DIODES; TURN OFF FAILURE;

AVALANCHE DIODES;

EID: 0032678240     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.753714     Document Type: Article

References (12)

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