On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche

IEEE Transactions on Electron Devices

Volumn 50, Issue 2, 2003, Pages 486-493

  Domeij, Martin ^a   Lutz, Josef ^b   Silber, Dieter ^c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^c UNIVERSITY OF BREMEN   (Germany)

Author keywords

Dynamic avalanche; Dynamic ruggedness; Power diode; SOA limit

Indexed keywords

APPROXIMATION THEORY; INSULATED GATE BIPOLAR TRANSISTORS; MATHEMATICAL MODELS; POWER ELECTRONICS;

REVERSE RECOVERY;

AVALANCHE DIODES;

EID: 0038732707     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.808423     Document Type: Article

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