Failure dynamics of the IGBT during turn-off for undamped inductive loading conditions

IEEE Transactions on Industry Applications

Volumn 36, Issue 2, 2000, Pages 614-624

  Shen, Chih Chieh ^a   Hefner Jr , Allen R ^a   Berning, David W ^a   Bernstein, Joseph B ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

Avalanche; Current constriction; Failure; Filament; Insulated gate bipolar transistor; Modeling; Nondestructive testing; Reverse bias safe operation area

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENT CONTROL; ELECTRIC LOAD FLOW; FAILURE ANALYSIS; GATES (TRANSISTOR); MATHEMATICAL MODELS; NONDESTRUCTIVE EXAMINATION; SWITCHING; WAVEFORM ANALYSIS;

CURRENT CONSTRICTION; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); UNCLAMPED INDUCTIVE SWITCHING (UIS);

BIPOLAR TRANSISTORS;

EID: 0033877923     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/28.833780     Document Type: Article

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