Theoretical study of dislocation nucleation from simple surface defects in semiconductors

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 5, 2004, Pages

  Godet, J ^a   Pizzagalli, L ^a   Brochard, S ^a   Beauchamp, P ^a  

^a UNIVERSITÉ DE POITIERS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATION; ARTICLE; ATOM; ATOMIC PARTICLE; CHEMICAL STRUCTURE; ELASTICITY; LOW TEMPERATURE; MATHEMATICAL MODEL; MELTING POINT; NUCLEAR PHYSICS; PLASTICITY; POLYMERIZATION; SEMICONDUCTOR; SHEAR STRESS; THEORETICAL STUDY;

EID: 37649028846     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.054109     Document Type: Article

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