Near-infrared p-i-n Ge-on-Si photodiodes for silicon integrated receivers

Journal of Lightwave Technology

Volumn 26, Issue 16, 2008, Pages 2954-2959

  Colace, Lorenzo ^a   Assanto, Gaetano ^a   Fulgoni, Dom ^b   Nash, Lee ^b  

^a ROMA TRE UNIVERSITY   (Italy)

^b Barclays   (United Kingdom)

Author keywords

Germanium; Near infrared; Optoelectronic devices; Photodetectors; Silicon optoelectronics

Indexed keywords

GERMANIUM; HETEROJUNCTION BIPOLAR TRANSISTORS; INFRARED DEVICES; OPTOELECTRONIC DEVICES; PHOTODIODES;

10GBIT/S; INFRARED PHOTODIODES; INTEGRATED RECEIVERS; NEAR INFRARED; REVERSE BIASES; SI PHOTODIODES; SILICON OPTOELECTRONICS; SILICON PROCESSING; SMALL SIGNALS;

SILICON;

EID: 56349130805     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2008.925032     Document Type: Article

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