Defect-induced trap-assisted tunneling current in GaInNAs grown on GaAs substrate

Journal of Applied Physics

Volumn 102, Issue 5, 2007, Pages

  Loke, W K ^a   Yoon, S F ^a   Wicaksono, S ^a   Tan, K H ^a   Lew, K L ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BIAS CURRENTS; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC POTENTIAL; PHOTODIODES; SEMICONDUCTOR GROWTH;

TUNNELING CURRENT; TUNNELING MECHANISMS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 34548630608     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2775908     Document Type: Article

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