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Volumn 98, Issue 22, 2011, Pages

An observation of charge trapping phenomena in GaN/AlGaN/ Gd2 O3 /Ni-Au structure

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT AIR; CHARGE LOSS; ELECTRON TRAPPING; FABRICATED STRUCTURES; MEMORY WINDOW; METAL OXIDE SEMICONDUCTOR STRUCTURES; NEGATIVE BIAS; PROGRAMMING PULSE; TIME DEPENDENT;

EID: 79958853039     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3596382     Document Type: Article
Times cited : (16)

References (30)
  • 17
    • 33947326574 scopus 로고    scopus 로고
    • 3 thin films for high- K application
    • DOI 10.1063/1.2713142
    • A. Laha, H. J. Osteen, and A. Fissel, Appl. Phys. Lett. 0003-6951 90, 113508 (2007). 10.1063/1.2713142 (Pubitemid 46439851)
    • (2007) Applied Physics Letters , vol.90 , Issue.11 , pp. 113508
    • Laha, A.1    Osten, H.J.2    Fissel, A.3
  • 23
    • 18644372023 scopus 로고    scopus 로고
    • GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2 O3 as gate dielectric
    • DOI 10.1063/1.1861122, 063501
    • P. D. Ye, B. Yang, K. K. Ng, J. Bude, G. D. Wilk, S. Halder, and J. C. M. Hwang, Appl. Phys. Lett. 0003-6951 86, 063501 (2005). 10.1063/1.1861122 (Pubitemid 40661647)
    • (2005) Applied Physics Letters , vol.86 , Issue.6 , pp. 1-3
    • Ye, P.D.1    Yang, B.2    Ng, K.K.3    Bude, J.4    Wilk, G.D.5    Halder, S.6    Hwang, J.C.M.7
  • 25
  • 30
    • 33746281113 scopus 로고    scopus 로고
    • Band offsets of high K gate oxides on III-V semiconductors
    • DOI 10.1063/1.2213170
    • J. Robertson and B. Falabretti, J. Appl. Phys. 0021-8979 100, 014111 (2006). 10.1063/1.2213170 (Pubitemid 44102019)
    • (2006) Journal of Applied Physics , vol.100 , Issue.1 , pp. 014111
    • Robertson, J.1    Falabretti, B.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.