PH-sensitive Gd2 O3 Si O2 stacked capacitors prepared by pure water anodic oxidation

Journal of the Electrochemical Society

Volumn 154, Issue 5, 2007, Pages

  Chang, Liann Be ^a,c   Ko, Hong Hsi ^b   Jeng, Ming Jer ^a   Lee, Yu Lin ^a   Lai, Chao Sung ^a,c  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NAN KAI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^c ELECTROCHEMICAL SOCIETY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE (C-V) MEASUREMENT; ELECTROLYTE INSULATOR SEMICONDUCTOR (EIS); PH SENSITIVITY; STACKED CAPACITORS;

ANODIC OXIDATION; CAPACITANCE MEASUREMENT; ELECTRIC BREAKDOWN; PERMITTIVITY; PH; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

ELECTROLYTIC CAPACITORS;

EID: 34047111217     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2709507     Document Type: Article

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