Electron trap memory characteristics of LiNbO3 film/AlGaN/GaN heterostructure

Applied Physics Letters

Volumn 96, Issue 3, 2010, Pages

  Hao, L Z ^a,b   Zhu, J ^a   Luo, W B ^a   Zeng, H Z ^a   Li, Y R ^a   Zhang, Y ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b CHINA UNIVERSITY OF PETROLEUM   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; ENERGY-BAND DIAGRAM; HETEROSTRUCTURES; LNO FILMS; MEMORY EFFECTS; MEMORY WINDOW; NONVOLATILE MEMORY DEVICES; OPERATING MECHANISM;

NONVOLATILE STORAGE;

GALLIUM NITRIDE;

EID: 77949819606     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3294308     Document Type: Article

References (22)

1. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe, and K. Chan, Appl. Phys. Lett. APPLAB 0003-6951 68, 1377 (1996). 10.1063/1.116085 (Pubitemid 126688256)
2. X. B. Lu and J. Y. Dai, Appl. Phys. Lett. APPLAB 0003-6951 88, 113104 (2006). 10.1063/1.2179374
3. J. H. Jung, J. Y. Jin, I. Lee, T. W. Kim, H. G. Roh, and Y. H. Kim, Appl. Phys. Lett. APPLAB 0003-6951 88, 112107 (2006). 10.1063/1.2185615
4. O. M. Nayfeh, D. A. Antoniadis, K. Mantey, and M. H. Nayfeh, Appl. Phys. Lett. APPLAB 0003-6951 90, 153105 (2007). 10.1063/1.2721145 (Pubitemid 46609877)
5. M. Asif Khan, J. N. Kuznia, D. T. Olson, W. J. Schaff, J. W. Burm, and M. S. Shur, Appl. Phys. Lett. APPLAB 0003-6951 65, 1121 (1994). 10.1063/1.112116
6. L. -H. Huang, S. -H. Yeh, and C. -T. Lee, Appl. Phys. Lett. APPLAB 0003-6951 93, 043511 (2008). 10.1063/1.2966142
7. W. Chen, K. -Y. Wong, W. Huang, and K. J. Chen, Appl. Phys. Lett. APPLAB 0003-6951 92, 253501 (2008). 10.1063/1.2951615
8. J. Gonzalo, J. A. Chaos, A. Suarez-Garcia, C. N. Afonso, and V. Pruneri, Appl. Phys. Lett. APPLAB 0003-6951 81, 2532 (2002). 10.1063/1.1506949 (Pubitemid 35312729)
9. S. Shandilya, M. Tomar, K. Sreenivas, and V. Gupta, J. Appl. Phys. JAPIAU 0021-8979 105, 094105 (2009). 10.1063/1.3121509
10. Y. Shibata, K. Kaya, K. Akashi, M. Kanai, T. Kawai, and S. Kawai, Appl. Phys. Lett. APPLAB 0003-6951 61, 1000 (1992). 10.1063/1.107774
11. P. J. Hansen, Y. Terao, Y. Wu, R. A. York, U. K. Mishra, and J. S. Speck, J. Vac. Sci. Technol. B JVTBD9 1071-1023 23, 162 (2005). 10.1116/1.1850106 (Pubitemid 43126548)
12. W. C. Yang, B. J. Rodriguez, A. Gruverman, and R. J. Nemanich, Appl. Phys. Lett. APPLAB 0003-6951 85, 2316 (2004). 10.1063/1.1790604
13. Z. Lin and W. Lu, J. Appl. Phys. JAPIAU 0021-8979 99, 014504 (2006). 10.1063/1.2158137 (Pubitemid 43107195)
14. Y. W. Chiang and J. M. Wu, Appl. Phys. Lett. APPLAB 0003-6951 91, 142103 (2007). 10.1063/1.2794335 (Pubitemid 47531502)
15. A. Koukab, A. Bath, and E. Losson, Solid-State Electron. SSELA5 0038-1101 41, 635 (1997). 10.1016/S0038-1101(96)00112-8
16. A. Mansingh and A. Dhar, J. Phys. D JPAPBE 0022-3727 18, 2059 (1985). 10.1088/0022-3727/18/10/016
17. F. P. Safaryan, R. S. Feigelson, and A. M. Petrosyan, J. Appl. Phys. JAPIAU 0021-8979 85, 8079 (1999). 10.1063/1.370645
18. Yukio Watanabe, Phys. Rev. B PRBMDO 0163-1829 57, R5563 (1998). 10.1103/PhysRevB.57.R5563
19. P. Normand, E. Kapetanakis, P. Dimitrakis, and D. Tsoukalas, Appl. Phys. Lett. APPLAB 0003-6951 83, 168 (2003). 10.1063/1.1588378
20. M. Y. Hao, H. Hwang, and J. C. Lee, Appl. Phys. Lett. APPLAB 0003-6951 62, 1530 (1993). 10.1063/1.108630
21. Y. C. Kong, F. S. Xue, J. J. Zhou, L. Li, C. Chen, and Y. R. Li, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 95, 703 (2009). 10.1007/s00339-008-4983-3
22. H. Donnerberg, S. M. Tomlinson, C. R. A. Catlow, and O. M. Schirmer, Phys. Rev. B PRBMDO 0163-1829 40, 11909 (1989). 10.1103/PhysRevB.40.11909