Proposal and simulated results of a normally off AlGaN/GaN HFET structure with a charged floating gate

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Hasegawa, Fumio ^a   Kambayashi, Hiroshi ^b   Li, Jiang ^b   Ikeda, Nariaki ^b   Nomura, Takehiko ^b   Kato, Sadahiro ^b   Yoshida, Seiko ^b  

^a KOGAKUIN UNIVERSITY   (Japan)

^b Yokohama Laboratory   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN LAYERS; ALGAN/GAN; ALGAN/GAN HFETS; CONTROL GATES; FLOATING GATES; JUNCTION FIELD EFFECT TRANSISTORS; NEGATIVE CHARGE; NORMALLY OFF; SIMULATED RESULTS; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

COMPUTER SIMULATION; ELECTRON GAS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; SILICON COMPOUNDS;

TWO DIMENSIONAL ELECTRON GAS;

EID: 79251615622     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880775     Document Type: Article

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