RF-distortion in deep-submicron CMOS technologies

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 807-810

  Van Langevelde, R ^a   Tiemeijer, L F ^a   Havens, R J ^a   Knitel, M J ^a   Roes, R F M ^a   Woerlee, P H ^a   Klaassen, D B M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; NATURAL FREQUENCIES; SEMICONDUCTOR DEVICE MODELS; SIGNAL DISTORTION; WIRELESS TELECOMMUNICATION SYSTEMS;

DISTORTION BEHAVIOR ANALYSIS; VELOCITY SATURATION;

MOSFET DEVICES;

EID: 0034453901     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Accurate drain conductance modeling for distortion analysis in MOSFETs
2. RF distortion characterisation of sub-micron CMOS
3. RF-CMOS performance trends
4. Implications of pocket optimisation on analog performance in deep sub-micron CMOS