RF linearity characteristics of SiGe HBTs

IEEE Transactions on Microwave Theory and Techniques

Volumn 49, Issue 9, 2001, Pages 1558-1565

  Niu, G ^a   Liang, Q ^a   Cressler, J D ^a   Webster, C S ^a   Harame, D L ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

Avalanche multiplication; Linearity; Nonlinearity cancellation; RF technology; SiGe HBT; Volterra series

Indexed keywords

AVALANCHE MULTIPLICATION;

CHEMICAL VAPOR DEPOSITION; INTERMODULATION; OPTIMIZATION; POWER AMPLIFIERS; SEMICONDUCTING SILICON COMPOUNDS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035445551     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.942567     Document Type: Article

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