RF distortion characterisation of sub-micron CMOS

European Solid-State Device Research Conference

Volumn , Issue , 2000, Pages 464-467

  Tiemeijer, L F ^a   Van Langevelde, R ^a   Gaillard, O ^a   Havens, R J ^a   Baltus, P G M ^a   Woerlee, P H ^a   Klaassen, D B M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

SOLID STATE DEVICES;

BIAS CONDITIONS; COMPACT MODEL; DISTORTION MEASUREMENT; FIGURE OF MERITS; HIGH LINEARITY; NONLINEAR I-V CHARACTERISTICS; SUB-MICRON CMOS TECHNOLOGY; SUBMICRON;

CMOS INTEGRATED CIRCUITS;

EID: 84907821647     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194815     Document Type: Conference Paper

References (8)

1. H.S. Momose et al., High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs, IEDM 1996, pp. 105-108.
2. L. de Vreede et al., "Advanced modelling of distortion effects in bipolar transistors us-ing the MEXTRAM model", IEEE J. Solid-State Circuits, Vol. 31, pp. 114-121, 1996.
3. M. Schröter, D.R. Pehlke, and T-Y. Lee, Compact modeling of high-frequency distortion in bipolar transistors , Proceedings ESSDERC 1999, 476-479, 1999.
4. R. van Langevelde, A Compact MOSFET Model for Distortion Analysis in Analog Circuit Design, IEDM 1997, pp. 313-317.
5. BSIM3 Model, see: http://www-device.EECS.Berkeley.EDU/
6. MOS Model 9, see: http://www semi-conductors.philips.com/Philips-Models.
7. T. Smedes and F.M. Klaassen, "A charge and capacitance model for modern MOS-FETs", Proceedings ESSDERC pp. 141-144, 1990.
8. A. Pruijmboom et al., "QUBiC3: A 0.5 BiCMOS production Technology, with fT=30 GHz, fmax=60 GHz and High-Quality Passive Components for Wireless Telecommunication Appliciations", Proceedings BCTM, pp. 120-123, 1998.