Analytical, temperature-dependent model for majority- and minority-carrier mobility in silicon devices

VLSI Design

Volumn 10, Issue 4, 2000, Pages 467-483

  Reggiani, Susanna ^a,b   Valdinoci, Marina ^a,b   Colalongo, Luigi ^a   Rudan, Massimo ^a   Baccarani, Giorgio ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b University of Bologna ^*

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COMPUTER AIDED DESIGN; COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; ELECTRIC NETWORK SYNTHESIS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

BOLTZMANN EQUATIONS; BULK MOBILITY MODELS;

VLSI CIRCUITS;

EID: 0033671546     PISSN: 1065514X     EISSN: None     Source Type: None    
DOI: 10.1155/2000/52147     Document Type: Article

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