Light-Induced-Degradation effects in boron-phosphorus compensated n -type Czochralski silicon

Applied Physics Letters

Volumn 96, Issue 9, 2010, Pages

  Schutz Kuchly, T ^a   Veirman, J ^a   Dubois, S ^a   Heslinga, D R ^a  

^a DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNIHILATION MECHANISMS; BORON-DOPED; CZOCHRALSKI SILICON; DEGRADATION EFFECT; P-TYPE SILICON;

ACTIVATION ENERGY; CARRIER LIFETIME; DEGRADATION; PHOSPHORUS;

BORON;

EID: 77949417449     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3334724     Document Type: Article

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