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Volumn 2, Issue 11, 2009, Pages

Small-signal microwave performance comparison of deep submicron AlGaN/GaN high electron mobility transistors on high-resistivity silicon and insulating substrates

(6) Sun, Haifeng a Alt, Andreas R a Marti, Diego a Vetter, Mathias a Benedickter, Hansruedi a Bolognesi, C R a

a ETH ZURICH (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; DEEP SUB-MICRON; DEVICE PERFORMANCE; DIFFERENT SUBSTRATES; GAN BUFFER; HIGH RESISTIVITY SILICON; INSULATING SUBSTRATES; MICROWAVE PERFORMANCE; MILLIMETER-WAVE APPLICATIONS; PARASITIC CONDUCTION; POTENTIAL SUBSTRATE; SAPPHIRE SUBSTRATES; SEMI-INSULATING; SI SUBSTRATES; SI TECHNOLOGY; SMALL SIGNAL; SMALL SIGNAL EQUIVALENT CIRCUIT;

COPLANAR WAVEGUIDES; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; MICROWAVES; SILICON; SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 73249137713 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.2.111002 Document Type: Article

Times cited : (9)

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