107-GHz (Al,Ga)N/GaN HEMTs on silicon with improved maximum oscillation frequencies

IEEE Electron Device Letters

Volumn 31, Issue 4, 2010, Pages 296-298

  Tirelli, Stefano ^a   Marti, Diego ^a   Sun, Haifeng ^a   Alt, Andreas R ^a   Benedickter, Hansruedi ^a   Piner, Edwin L ^b   Bolognesi, C R ^a  

^a ETH ZURICH   (Switzerland)

^b NITRONEX CORPORATION   (United States)

Author keywords

AlGaN GaN; High electron mobility transistors (HEMTs); High frequency performance; High resistivity silicon (HR Si); Millimeter wave transistors

Indexed keywords

ALGAN/GAN; CARBIDE SUBSTRATES; CURRENT GAIN CUTOFF FREQUENCY; DEEP SUBMICROMETER; HIGH FREQUENCY PERFORMANCE; HIGH RESISTIVITY SILICON; HIGH-SPEED; MAXIMUM OSCILLATION FREQUENCY; MILLIMETER-WAVE TRANSISTORS; SEMI-INSULATING; SILICON SUBSTRATES;

CARBIDES; CUTOFF FREQUENCY; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; PASSIVATION; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77950082877     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2039847     Document Type: Article

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