AlGaN/GaN HEMTs on (001) silicon substrate with power density performance of 2.9 W/mm at 10 GHz

IEEE Transactions on Electron Devices

Volumn 57, Issue 7, 2010, Pages 1497-1503

  Gerbedoen, Jean Claude ^a   Soltani, Ali ^a   Joblot, Sylvain ^b,c   De Jaeger, Jean Claude ^a   Gaquière, Christophe ^a   Cordier, Yvon ^b   Semond, Fabrice ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b CNRS   (France)

^c STMICROELECTRONICS   (France)

Author keywords

(001) Si; AlGaN GaN; high electron mobility transistor (HEMT); microwave power

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CURRENT GAIN CUTOFF FREQUENCY; EXTRINSIC TRANSCONDUCTANCE; GAN HEMTS; GATE LENGTH; GATE PERIPHERY; LINEAR GAIN; MAXIMUM OSCILLATION FREQUENCY; MICROWAVE POWER; ORIENTED SILICON; OUTPUT POWER DENSITY; POWER DENSITIES; POWER-ADDED EFFICIENCY; S-PARAMETER MEASUREMENTS; SI SUBSTRATES; SILICON SUBSTRATES;

CUTOFF FREQUENCY; DC POWER TRANSMISSION; DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; MICROWAVE GENERATION; MICROWAVE POWER TRANSMISSION; SCATTERING PARAMETERS; SILICON;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77954030279     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2048792     Document Type: Article

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