MOVPE of AlN-free hexagonal GaN/cubic SiC/Si heterostructures for vertical devices

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2840-2843

  Komiyama, Jun ^a,b   Abe, Yoshihisa ^a   Suzuki, Shunichi ^a   Nakanishi, Hideo ^a   Koukitu, Akinori ^b  

^a Nissei Bldg   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

A1. Crystal structure; A3. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

A1. CRYSTAL STRUCTURE; A3. METALORGANIC VAPOR PHASE EPITAXY; ALGAN; ALN; ALN BUFFER; B1. NITRIDES; CARRIER GAS; GAN (0 0 0 1); GROWTH OF GAN; HETEROSTRUCTURES; HIGH TEMPERATURE; HYDROGEN ATOMS; LOW TEMPERATURES; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE; SI (1 1 1); SPECULAR SURFACE; VERTICAL DEVICES;

CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALS; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; SEMICONDUCTING GALLIUM; SILICON CARBIDE; SULFUR COMPOUNDS; VAPORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 65749117564     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.025     Document Type: Article

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