Top-gated graphene field-effect transistors using graphene on si (111) wafers

IEEE Electron Device Letters

Volumn 31, Issue 11, 2010, Pages 1193-1195

  Moon, J S ^a   Curtis, D ^a   Bui, S ^a   Marshall, T ^a   Wheeler, D ^a   Valles, I ^a   Kim, S ^a   Wang, E ^a   Weng, X ^b   Fanton, M ^b  

^a Hughes Aircraft Co   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Field effect mobility; field effect transistor (FET); graphene; n FET; p FET; Si MOSFET; SOI MOSFET

Indexed keywords

FIELD-EFFECT MOBILITIES; N-FET; P-FET; SI MOSFET; SOI-MOSFETS;

GRAPHENE; MESFET DEVICES; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS;

FIELD EFFECT TRANSISTORS;

EID: 78049297482     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2065792     Document Type: Article

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