Phase-field model for the chemical vapor infiltration of silicon carbide

Journal of the Electrochemical Society

Volumn 157, Issue 7, 2010, Pages

  Schnack, E ^a   Wang, F W ^a   Li, A J ^a  

^a UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION OF; CONCENTRATION PROFILES; EXTRA VARIABLES; GAS-SOLID INTERFACE; GASEOUS REACTANTS; GASPHASE; GINZBURG-LANDAU; HETEROGENEOUS CHEMICAL REACTION; MASS BALANCE; MASS TRANSPORT; METHYLTRICHLOROSILANE; NUMERICAL RESULTS; PHASE FIELDS; PHASE-FIELD MODELS; PROCESS INTENSITY; SINGLE DECOMPOSITION; SOLID PRODUCTS; SUBSTRATE SURFACE;

BIOLOGY; DIAMOND FILMS; FINITE ELEMENT METHOD; SEEPAGE; SILICON CARBIDE; SOIL MECHANICS; VAPORS;

PHASE INTERFACES;

EID: 77953166080     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3409493     Document Type: Article

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