Examining the transparency of gallium-doped zinc oxide for photovoltaic applications

Solar Energy Materials and Solar Cells

Volumn 95, Issue 8, 2011, Pages 2400-2406

  Wong, L M ^a   Chiam, S Y ^a   Huang, J Q ^b   Wang, S J ^a   Chim, W K ^c   Pan, J S ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b DATA STORAGE INSTITUTE   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Band gap; Gallium zinc oxide; Optical properties; Oxygen pressure; Transparency index

Indexed keywords

INFLUENCE OF OXYGEN; ORGANIC DEVICES; OXYGEN PRESSURE; PHOTOVOLTAIC APPLICATIONS; PHOTOVOLTAIC DEVICES; ROOM TEMPERATURE; SOLAR SPECTRUM; SUBSTRATE TEMPERATURE; ZNO;

CARRIER CONCENTRATION; DEPOSITION; ELECTRODES; ENERGY GAP; GALLIUM; GALLIUM ALLOYS; OXIDE FILMS; OXYGEN; PHOTOVOLTAIC EFFECTS; PULSED LASER DEPOSITION; THIN FILMS; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

TRANSPARENCY;

EID: 79958110876     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.04.013     Document Type: Article

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