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Volumn 44, Issue 6, 2008, Pages 742-753
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Growth of Ga-doped ZnO films with ZnO buffer layer by sputtering at room temperature
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Author keywords
Buffer layer; Grey relational; Transparent conductive oxide; Zinc oxide
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Indexed keywords
ABS RESINS;
BUFFER LAYERS;
CHEMICAL VAPOR DEPOSITION;
COATINGS;
DEPOSITION;
ELECTRIC RESISTANCE;
EPITAXIAL LAYERS;
GALLIUM;
GALLIUM ALLOYS;
MAGNETRON SPUTTERING;
OPACITY;
OPTICAL PROPERTIES;
OPTICAL WAVEGUIDES;
OPTOELECTRONIC DEVICES;
OXIDES;
POLYMERIC GLASS;
SEMICONDUCTING ZINC COMPOUNDS;
TAGUCHI METHODS;
ZINC;
ZINC ALLOYS;
ZINC OXIDE;
COATING PARAMETERS;
COATING PROCESSES;
DEPOSITION TIMES;
ELECTRICAL RESISTIVITIES;
FILM DEPOSITIONS;
GLASS SUBSTRATES;
GREY RELATIONAL;
METHOD ANALYSES;
OPTICAL TRANSMITTANCES;
PERFORMANCE CHARACTERISTICS;
PERFORMANCE INDICES;
POLYMERIC SUBSTRATES;
R.F. MAGNETRON SPUTTERING;
RATE RATIOS;
RELATIONAL GRADES;
ROOM TEMPERATURE DEPOSITIONS;
ROOM TEMPERATURES;
SPUTTERING PRESSURES;
TAGUCHI;
TRANSPARENT CONDUCTIVE OXIDE;
ZINC OXIDE FILMS;
ZNO BUFFER LAYERS;
ZNO FILMS;
OXIDE FILMS;
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EID: 55649110475
PISSN: 07496036
EISSN: 10963677
Source Type: Journal
DOI: 10.1016/j.spmi.2008.08.001 Document Type: Article |
Times cited : (31)
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References (29)
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