Study of the bandgap renormalization in Ga-doped ZnO films by means of optical absorption under high pressure and photoelectron spectroscopy

Superlattices and Microstructures

Volumn 43, Issue 4, 2008, Pages 362-367

  Sans, J A ^a   Sanchez Royo J F ^a   Segura, A ^a  

^a UNIVERSITY OF VALENCIA   (Spain)

Author keywords

Band filling; Bandgap renormalization; DAC; Degenerate semiconductors; High pressure; PLD; TCO; Thin films; UPS; XPS; ZnO

Indexed keywords

DOPING (ADDITIVES); ENERGY GAP; GALLIUM; HIGH PRESSURE EFFECTS; LIGHT ABSORPTION; PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

BAND FILLING; BANDGAP RENORMALIZATION; DEGENERATE SEMICONDUCTORS;

THIN FILMS;

EID: 40949155521     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2007.12.020     Document Type: Article

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