Temperature and drain voltage dependence of gate-induced drain leakage

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 101-105

  Lopez, L ^a,b   Masson, P ^b   Nee D ^a   Bouchakour, R ^b  

^a STMICROELECTRONICS   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

Band to band tunneling; GIDL

Indexed keywords

BAND STRUCTURE; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC POTENTIAL; ELECTRON TUNNELING; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MOSFET DEVICES; PARAMETER ESTIMATION; SIMULATORS;

BAND TO BAND TUNNELING; GATE INDUCED DRAIN LEAKAGE (GIDL);

GATES (TRANSISTOR);

EID: 1642603030     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2003.12.024     Document Type: Conference Paper

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