Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor

Journal of Applied Physics

Volumn 107, Issue 2, 2010, Pages

  Verhulst, Anne S ^a,b   Sorée, Bart ^b   Leonelli, Daniele ^b   Vandenberghe, William G ^b   Groeseneken, Guido ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MATERIALS; CHANNEL THICKNESS; DEVELOPED MODEL; DEVICE PARAMETERS; DIELECTRIC CONSTANTS; DIELECTRIC THICKNESS; DOUBLE-GATE; EXPERIMENTAL DATA; GATE-ALL-AROUND; HIGH DRAIN VOLTAGE; METAL OXIDE SEMICONDUCTOR; SUBTHRESHOLD; SUPPLY VOLTAGES; TUNNEL CURRENTS; VOLTAGE DEPENDENCE;

GATE DIELECTRICS; GATES (TRANSISTOR); WIND TUNNELS;

FIELD EFFECT TRANSISTORS;

EID: 75749129067     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3277044     Document Type: Article

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