Modeling of drain leakage current in SOI pMOSFETs

Solid-State Electronics

Volumn 43, Issue 12, 1999, Pages 2147-2154

  Jang, Sheng Lyang ^a   Lin, Hao Hsun ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; SILICON ON INSULATOR TECHNOLOGY;

VERTICAL SURFACE CHANNEL ELECTRIC FIELDS;

MOSFET DEVICES;

EID: 0033284259     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00195-1     Document Type: Article

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