Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

Microelectronics Reliability

Volumn 38, Issue 9, 1998, Pages 1425-1431

  Huang, L ^a   Lai, P T ^a   Xu, J P ^a   Cheng, Y C ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRON TUNNELING; HOT CARRIERS; LEAKAGE CURRENTS; STRESSES; THERMAL EFFECTS;

GATE INDUCED DRAIN LEAKAGE; HOT CARRIER STRESS; INTERFACE TRAP DENSITY; POOLE-FRENKLE EMISSION;

MOSFET DEVICES;

EID: 0032157676     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00044-4     Document Type: Article

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