SOI TFETs: Suppression of ambipolar leakage and low-frequency noise behavior

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Volumn , Issue , 2010, Pages 341-344

  Wan, Jing ^a   Le Royer, Cyrille ^b   Zaslavsky, Alexander ^c   Cristoloveanu, Sorin ^a  

^a IMEP LAHC   (France)

^b CEA GRENOBLE   (France)

^c Brown University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; EFFECTIVE GATE LENGTH; LOW-FREQUENCY NOISE; MOSFETS; SOI SUBSTRATES; SOURCE-DRAIN LEAKAGE; TEMPERATURE DEPENDENCE; THIN BODY; TUNNELING FIELD-EFFECT TRANSISTORS;

DRAIN CURRENT; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; SILICON COMPOUNDS; SOLID STATE DEVICES; THERMAL NOISE; TUNNEL JUNCTIONS;

GATE DIELECTRICS;

EID: 78649964022     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5618222     Document Type: Conference Paper

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