Molecular beam epitaxy grown template for subsequent atomic layer deposition of high κ dielectrics

Applied Physics Letters

Volumn 89, Issue 22, 2006, Pages

  Lee, K Y ^a   Lee, W C ^a   Lee, Y J ^a   Huang, M L ^a,b   Chang, C H ^a   Wu, T B ^a   Hong, M ^a   Kwo, J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CURRENT DENSITY; HAFNIUM COMPOUNDS; HIGH RESOLUTION ELECTRON MICROSCOPY; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; PERMITTIVITY; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); COMPOSITE FILMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LEAKAGE CURRENT DENSITY;

DIELECTRIC MATERIALS;

EID: 33751565290     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2397542     Document Type: Article

References (6)

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