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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 12, 2008, Pages 3686-3689

Porous anodic alumina thin films on Si: Interface characterization

(4) Gianneta, V a Nassiopoulou, A G a Krontiras, C A b Georga, S N b

a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY (Greece)

b UNIVERSITY OF PATRAS (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

AL FILMS; ANODIZATION; CONDUCTANCE METHODS; CONSTANT VOLTAGES; DEPLETION REGIONS; ELECTRICAL QUALITIES; FREQUENCY RANGES; GATE VOLTAGES; HEXAGONAL CLOSE PACKED STRUCTURES; INTERFACE CHARACTERIZATIONS; INTERFACE TRAP DENSITIES; MASKING LAYERS; METALLIZATION; MIS STRUCTURES; NEW YORK; POROUS ANODIC ALUMINAS; SEMI-CONDUCTORS; SI SUBSTRATES; SULPHURIC ACIDS; V CURVES; VOLTAGE RANGES; WITH OR WITHOUT;

ADMINISTRATIVE DATA PROCESSING; ALUMINUM SHEET; ELECTROCHEMICAL OXIDATION; METAL INSULATOR BOUNDARIES; MIS DEVICES; NANOELECTRONICS; NANOTECHNOLOGY; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SILICON; SILICON COMPOUNDS; SULFURIC ACID; SWITCHING CIRCUITS; THICK FILMS; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 57349113751 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200780160 Document Type: Conference Paper

Times cited : (19)

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