Charging/discharging kinetics in LPCVD silicon nanocrystal MOS memory structures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 38, Issue 1-2, 2007, Pages 89-93

  Turchanikov, V ^a   Nazarov, A ^a   Lysenko, V ^a   Tsoi, E ^b   Salonidou, A ^b   Nassiopoulou, A G ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

Nanoclusters; Nanodots; NVM

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; KINETICS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; MOS DEVICES; NANOCLUSTERS; OXIDATION;

CUMULATIVE TIME; DISCHARGING KINETICS; NON-VOLATILE MEMORY (NVM0; PULSE DURATION; THERMAL OXIDATION;

NANOCRYSTALS;

EID: 34147193604     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2006.12.034     Document Type: Article

References (5)

1. Tiwari S., Rana F., Hanafi H., Harstein A., and Crabbe E. Appl. Phys. Lett. 68 (1996) 1377
2. Tsoi E., Normand P., Nassiopoulou A.G., Ioannu-Sougleridis V., Salonidou A., and Giannakopoulos K. J. Phys.: Conf. Ser. 10 (2005) 31
3. Turchanikov V.I., Nazarov A.N., Lysenko V.S., Winkler O., Spangenberg B., and Kurz H. Mater. Sci. Eng. B 124-125 (2005) 517
4. Turchanikov V.I., Nazarov A.N., Lysenko V.S., Carreras J., and Garrido B. Microelectron. Reliab. 45 (2005) 903
5. Wesler J.J., Tiwari S., Rishton S., Lee K.Y., and Lee Y. IEEE Electron Dev. Lett. 18 (1997) 278