Two-silicon-nanocrystal layer memory structure with improved retention characteristics

Journal of Nanoscience and Nanotechnology

Volumn 7, Issue 1, 2007, Pages 368-373

  Nassiopoulou, A G ^a   Salonidou, A ^a  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

Author keywords

Double Dot Layer Structure; Improved Charge Retention; Si Nanocrystal Memory Structure

Indexed keywords

MEMORY STRUCTURES; METAL OXIDE SEMICONDUCTOR (MOS) STRUCTURES; NANO CRYSTALS; NANOCRYSTAL DENSITY; NANOCRYSTAL MEMORIES; RETENTION CHARACTERISTICS; SELF ALIGNED (SA); SILICON NANOCRYSTALS (SI-NC);

GATE DIELECTRICS; GATES (TRANSISTOR); NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURES; NONMETALS; SEMICONDUCTING SILICON; SEMICONDUCTOR STORAGE; SILICON;

NANOTECHNOLOGY;

NANOPARTICLE; SILICON; SILICON DIOXIDE;

ARTICLE; CALIBRATION; CHEMISTRY; CRYSTALLIZATION; DATA STORAGE DEVICE; ELECTROCHEMISTRY; ELECTRON; EQUIPMENT DESIGN; INFORMATION RETRIEVAL; METHODOLOGY; NANOTECHNOLOGY; TIME; TRANSMISSION ELECTRON MICROSCOPY;

CALIBRATION; COMPUTER STORAGE DEVICES; CRYSTALLIZATION; ELECTROCHEMISTRY; ELECTRONS; EQUIPMENT DESIGN; INFORMATION STORAGE AND RETRIEVAL; MICROSCOPY, ELECTRON, TRANSMISSION; NANOPARTICLES; NANOTECHNOLOGY; SILICON; SILICON DIOXIDE; TIME FACTORS;

EID: 34447336164     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (16)

1. S. Tiwari, F. Rana, K. Chan, H. Hanafi, C. Wei, and D. Buchanan, IEEE Int. Electr. Dev. Meeting Tech. Dig. 521 (1995).
2. B. De Salvo, G. Ghibaudo, G. Pananakakis, P. Masson, T. Baron, N. Buffet, A. Fernades, and B. Guillaumot, IEEE Trans. Electr. Dev. 48, 1789 (2001).
3. Jan de Blauwe, IEEE Trans. Nanotechnol. 1, 72 (2002).
4. J. J. Lee, X. Wang, W. Bai, N. Lu, and D. L. Kwong, IEEE Trans. Electr. Dev. 50, 2067 (2003).
5. R. A. Rao, R. F. Steimle, M. Sadd, C. T. Swift, B. Hradsky, S. Straub, T. Merchant, M. Stoker, S. G. H. Anderson, M. Rossow, J. Yater, B. Acred, K. Harber, E. J. Prinz, B. E. White, Jr., and R. Muralidhar, Solid State Electr. 48, 1463 (2004).
6. T. Baron, F. Mazen, J. M. Hartmann, P. Mur, R. A. Puglisi, S. Lombardo, G. Ammendola, and C. Gerardi, Solid State Electr. 48, 1503 (2004).
7. A. G. Nassiopoulou, Encyclopedia of Nanoscience and Nanotechnology, edited by H. S. Nalwa, American Scientific Publishers, California, (2004), Vol. 9, p. 793.
8. E. Tsoi, P. Normand, A. G. Nassiopoulou, V. Ioannou-Sougleridis, A. Salonidou, and K. Giannakopoulos, J. Phys. C. Conf. Ser. 10, 31 (2005).
9. C. Y. Ng, T. P. Chen, D. Sreeduth, Q. Chen, L. Ding, and A. Du, Thin Solid Films 504, 25 (2006).
10. S. Park, H. Im, I. Kim, and T. Hiramoto, Jpn. J. Appl. Phys. 45, 638 (2006).
11. R. Ohba, N. Sugiyama, K. Uchita, J. Koga, and A. Toriumi, IEEE Trans. Electr. Dev. 49, 1392 (2002).
12. A. Salonidou, A. G. Nassiopoulou, A. Travlos, V. Ioannou-Sougleridis, and E. Tsoi, Nanotechnology 15, 1233 (2004).
13. P. Photopoulos, A. G. Nassiopoulou, D. N. Kouvatsos, and A. Travlos, Appl. Phys. Lett. 76, 3588 (2000).
14. V. Ioannou-Sougleridis and A. G. Nassiopoulou, J. Appl. Phys. 94, 4084 (2003).
15. V. Ioannou-Sougleridis, A. G. Nassiopoulou, and A. Travlos, Nanotechnology 14, 1174 (2003).
16. V. Ioannou-Sougleridis and A. G. Nassiopoulou, J. Phys.: Conf. Ser. 10, 39 (2005).