EUV secondary electron blur at the 22nm half pitch node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7969, Issue , 2011, Pages

  Gronheid, Roel ^a   Younkin, Todd R ^b   Leeson, Michael J ^b   Fonseca, Carlos ^c   Hooge, Joshua S ^c   Nafus, Kathleen ^d   Biafore, John J ^e   Smith, Mark D ^e  

^a IMEC   (Belgium)

^b INTEL CORPORATION   (United States)

^c TOKYO ELECTRON AMERICA INC   (United States)

^d TOKYO ELECTRON LTD   (Japan)

^e KLA Tencor Austin   (United States)

Author keywords

EUV; lithography simulation; LWR; resist sensitivity; resolution; secondary electron blur

Indexed keywords

EUV; LITHOGRAPHY SIMULATION; LWR; RESIST SENSITIVITY; RESOLUTION; SECONDARY ELECTRON BLUR;

ELECTRON BEAM LITHOGRAPHY; ROUGHNESS MEASUREMENT; SECONDARY EMISSION; STOCHASTIC MODELS; STOCHASTIC SYSTEMS;

ELECTRONS;

EID: 79957969259     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.881427     Document Type: Conference Paper

References (14)

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