EUV lithography for 22nm half pitch and beyond: Exploring resolution, LWR, and sensitivity tradeoffs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7969, Issue , 2011, Pages

  Putna, E Steve ^a   Younkin, Todd R ^a   Leeson, Michael ^a   Caudillo, Roman ^a   Bacuita, Terence ^a   Shah, Uday ^a   Chandhok, Manish ^a  

^a INTEL CORPORATION   (United States)

Author keywords

22nm HP; EUV; EUVL; Extendibility; Extreme Ultraviolet Lithography; LER; LWR; Manufacturability; MET; Micro Exposure Tool; Photoresist; roughness

Indexed keywords

22NM HP; EUV; EUVL; EXTENDIBILITY; LER; LWR; MANUFACTURABILITY; MET; MICRO-EXPOSURE TOOL; ROUGHNESS;

EXPOSURE METERS; PHOTORESISTS; ROUGHNESS MEASUREMENT;

LITHOGRAPHY;

EID: 79957968095     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.879641     Document Type: Conference Paper

References (5)

1. Putna, E.S., Younkin, T., Caudillo, R., Chandhok, M., "EUV lithography for 22nm half pitch and beyond: exploring resolution, LWR, and sensitivity tradeoffs", Proc. of SPIE Vol. 7636, 76360P, (2010)
2. Chandhok, M., Frasure, K., Putna, E.S., Younkin, T., Rachmady, W., Shah, U., and Yueh, W., "Improvement in Linewidth Roughness by Postprocessing," J. Vac. Sci. Technol. B 26 2265 (2008).
3. Wallow, T., Higgins, C., Brainard, R., Petrillo, K., Montgomery, W., Koay, C., Denbeaux, G., Wood, O., Wei, Y., "Evaluation of EUV resist materials for use at the 32 nm half-pitch node," Proc. of SPIE Vol. 6921, 69211F, (2008)
4. Kobayashi, S., Shimura, S., Kawasaki, T., Nafus, K., Hatakeyama, S., Shite, H., Nishimura, E., Kushibiki, M., Hara, A., Gronheid, R., Vaglio-Pret, A., Kitano, J., "LWR reduction by novel lithographic and etch techniques", Proc. of SPIE Vol. 7639, 763914, (2010)
5. Jung, B., Ober, C., Thompson, M., Chandhok, M., "LWR reduction and flow of chemically amplified resist patterns during sub-millisecond heating", Proc. of SPIE Vol. 7972, (2011)