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Volumn 7636, Issue , 2010, Pages

Aerial image improvements on the Intel MET

Author keywords

Aerial Image; EUV; EUVL; Extreme Ultraviolet Lithography; MET; Micro Exposure Tool

Indexed keywords

45-NM HALF-PITCH; AERIAL IMAGE; AERIAL IMAGES; DEPTH OF FOCUS; DIPOLE ILLUMINATION; EUV MASK; EXTREME ULTRAVIOLETS; MICRO-EXPOSURE TOOL; OUTER SHELLS; PARTIAL COHERENCE; PROCESS WINDOW; RESOLUTION CAPABILITY;

EID: 77953464485     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.849142     Document Type: Conference Paper
Times cited : (3)

References (13)
  • 7
    • 77953409491 scopus 로고    scopus 로고
    • Printability of extreme ultraviolet lithography mask pattern defects for 22-40 nm half-pitch features
    • in print
    • Kloster, G.M., Liang, T., Younkin, T.R., Putna, E.S., Caudillo, R., and Son, I.S, "Printability of extreme ultraviolet lithography mask pattern defects for 22-40 nm half-pitch features," Proc. SPIE, -in print-, (2010).
    • (2010) Proc. SPIE
    • Kloster, G.M.1    Liang, T.2    Younkin, T.R.3    Putna, E.S.4    Caudillo, R.5    Son, I.S.6
  • 11
    • 77953394961 scopus 로고    scopus 로고
    • EUV Lithography for 22nm Half Pitch and Beyond: Exploring Resolution, Sensitivity and LWR Tradeoffs
    • in print
    • Putna, E.S., Younkin, T.R., Caudillo, R., and Chandhok, M., "EUV Lithography for 22nm Half Pitch and Beyond: Exploring Resolution, Sensitivity and LWR Tradeoffs," Proc. SPIE, -in print-, (2010).
    • (2010) Proc. SPIE
    • Putna, E.S.1    Younkin, T.R.2    Caudillo, R.3    Chandhok, M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.