Electrical properties of metal-ferroelectric-insulator-semiconductor structure using BaxSr1-xTiO3 for ferroelectric-gate field effect transistor

Solid-State Electronics

Volumn 62, Issue 1, 2011, Pages 25-30

  Saif, Ala'Eddin A ^a   Poopalan, P ^a  

^a UNIVERSITY MALAYSIA PERLIS   (Malaysia)

Author keywords

BST thin films; C V Characteristics; Memory window; MFIS

Indexed keywords

APPLIED VOLTAGES; BST THIN FILMS; C-V CHARACTERISTIC; ELECTRICAL PROPERTY; FERROELECTRIC MEMORY; GRAIN SIZE; MEMORY WINDOW; METAL FERROELECTRIC INSULATOR SEMICONDUCTORS; METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR STRUCTURES; MFIS; SOL-GEL TECHNIQUE; TIO;

BARIUM; ELECTRIC PROPERTIES; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; PEROVSKITE; SEMICONDUCTOR DEVICE STRUCTURES; THIN FILMS;

FERROELECTRIC FILMS;

EID: 79957949635     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.03.004     Document Type: Article

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