Characteristics of metal-ferroelectric-insulator-semiconductor structure using Sr0.8Bi2.2Ta2O9 and Sr 0.8Bi2.2Ta2O9-BaZrO3 for ferroelectric gates

Microelectronic Engineering

Volumn 87, Issue 11, 2010, Pages 2173-2177

  Bozgeyik, Mehmet S ^a,b   Cross, J S ^a   Ishiwara, H ^a   Shinozaki, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b KAHRAMANMARAS SUTCU IMAM UNIVERSITY   (Turkey)

Author keywords

BaZrO3; Ferroelectric memory; Memory window; SBT

Indexed keywords

DATA RETENTION TIME; FERROELECTRIC FIELD EFFECT TRANSISTORS; FERROELECTRIC GATE; FERROELECTRIC MEMORY; GATE MATERIALS; GATE VOLTAGES; INTRINSIC DEFECTS; LEAKAGE CURRENT DENSITYS; MEMORY WINDOW; METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR STRUCTURES; MFIS STRUCTURE; POROUS FILM; PROCESS IMPROVEMENT; SI SUBSTRATES; SOL-GEL METHODS;

BARIUM COMPOUNDS; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; FERROELECTRIC DEVICES; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; GELS; HAFNIUM COMPOUNDS; SEMICONDUCTING SILICON; SOL-GEL PROCESS; SURFACE DEFECTS; TANTALUM;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 77955514160     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.01.021     Document Type: Article

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