Memory properties of metal/ferroelectric/semiconductor and metal/ferroelectric/insulator/semiconductor structures using rf sputtered ferroelectric Sr0.8Bi2.5 Ta1.2Nb0.8O9 thin films

Journal of the European Ceramic Society

Volumn 24, Issue 8, 2004, Pages 2471-2476

  Huang, Chia Hsing ^a   Wang, Yi Kai ^a   Lue, Hang Ting ^a   Huang, Jun Yao ^a   Lee, Ming Zi ^a   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

(Sr,Bi)(Ta,Nb)O3; Fatigue; Ferroelectric properties; Films; Lifetime; SBTN; Sputtering

Indexed keywords

CAPACITANCE; CRYSTAL ORIENTATION; FILM GROWTH; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; SHAPE MEMORY EFFECT; SUBSTRATES; SWITCHING;

MEMORY WINDOWS; RETENTION TIME;

FERROELECTRIC THIN FILMS;

CERAMICS;

EID: 1342312492     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0955-2219(03)00635-6     Document Type: Article

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