The effect of annealing temperature on the electrical properties of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (ZrO2)-semiconductor (MFIS) thin-film capacitors

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2014-2017

  Juan, P C ^a,b   Jiang, J D ^a   Shih, W C ^a   Lee, J Y M ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

Conduction mechanism; Ferroelectric memory; Memory window; Zirconium oxide

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRIC INSULATORS; FERROELECTRIC MATERIALS; HIGH TEMPERATURE EFFECTS; LEAD COMPOUNDS; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICES; THIN FILM DEVICES; ZIRCONIA;

CONDUCTION MECHANISMS; FERROELECTRIC MEMORY; MEMORY WINDOWS; METAL FERROELECTRIC INSULATOR SEMICONDUCTORS (MFIS);

CAPACITORS;

EID: 34248647617     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.004     Document Type: Article

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