Ferroelectric-gate field effect transistors using Nd2Ti2O7/Y2O3/Si structures

Thin Solid Films

Volumn 398-399, Issue , 2001, Pages 663-667

  Woo Sik Kim, ^a   Ha, S M ^a   Yang, J K ^a   Park, H H ^a  

^a Yonsei University   (South Korea)

Author keywords

Ferroelectric gate field effect transistor; Memory windows; Nd2Ti2O7 Y2 O3 Si structure

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; FERROELECTRIC MATERIALS; FERROELECTRIC THIN FILMS; X RAY DIFFRACTION ANALYSIS;

MEMORY WINDOWS;

FIELD EFFECT TRANSISTORS;

EID: 4243474468     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01333-5     Document Type: Conference Paper

References (9)