Thermal-stress stability of yttrium oxide as a buffer layer of metal-ferroelectric-insulator-semiconductor field effect transistor

Thin Solid Films

Volumn 473, Issue 2, 2005, Pages 335-339

  Lee, Chang Ki ^a   Kim, Woo Sik ^a   Park, Hyung Ho ^a   Jeon, Hyeongtag ^b   Pae, Yeon Ho ^c  

^a Yonsei University   (South Korea)

^b Hanyang University   (South Korea)

^c KLA TENCOR CORPORATION   (United States)

Author keywords

Interfacial layer; MFIS FET; Nd2Ti2O 7 ferroelectric; Thermal stress; Y2O3 barrier layer

Indexed keywords

CRYSTALLIZATION; ELLIPSOMETRY; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; RAPID THERMAL ANNEALING; SEMICONDUCTOR MATERIALS; SPECTROSCOPIC ANALYSIS; THERMAL STRESS;

INTERFACIAL LAYERS; MFIS-FET; ND2TI2O7 FERROELECTRIC; Y2O3 BARRIER LAYERS;

YTTRIUM COMPOUNDS;

EID: 10644257859     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.08.009     Document Type: Article

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