Electrical properties of (Bi,La)4Ti3O12 -based ferroelectric-gated field effect transistors employed with a thermally oxidized SiO2 layer

Journal of the European Ceramic Society

Volumn 25, Issue 12 SPEC. ISS., 2005, Pages 2309-2312

  Pak, Jaemoon ^a   Ko, Eunjung ^a   Nam, Kuangwoo ^a   Park, Gwangseo ^a  

^a Sogang University   (South Korea)

Author keywords

1T FRAM; Electrical properties; Ferroelectric properties

Indexed keywords

BISMUTH COMPOUNDS; CAPACITANCE; CURRENT DENSITY; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; FURNACES; HYSTERESIS; LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; PULSED LASER DEPOSITION; SILICA; THERMOOXIDATION; VOLTAGE MEASUREMENT;

BIAS VOLTAGE; INVERTED HYSTERESIS; LEAKAGE CURRENT DENSITY; MEMORY WINDOW VALUES;

FERROELECTRIC CERAMICS;

FILM;

EID: 20444473782     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2005.03.050     Document Type: Article

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