Logic performance evaluation and transport physics of schottky-gate III-V compound semiconductor quantum well field effect transistors for power supply voltages (VCC) ranging from 0.5V to 1.0V

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Dewey, G ^a   Kotlyar, R ^a   Pillarisetty, R ^a   Radosavljevic, M ^a   Rakshit, T ^a   Then, H ^a   Chau, R ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRIVE CURRENTS; EFFECTIVE VELOCITY; III-V COMPOUND SEMICONDUCTOR; PERFORMANCE EVALUATION; POWER SUPPLY VOLTAGE; QUANTUM WELL FIELD-EFFECT TRANSISTORS; SCHOTTKY-GATE; SI MOSFET; STRAINED SI MOSFETS; STRAINED-SI; TRANSPORT PHYSICS;

ELECTRON DEVICES; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; QUANTUM CHEMISTRY; SEMICONDUCTOR QUANTUM WELLS; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77952366199     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424314     Document Type: Conference Paper

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