Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy

Applied Surface Science

Volumn 257, Issue 18, 2011, Pages 8110-8112

  Shi, K ^a,c   Liu, X L ^a,c   Li, D B ^b,c   Wang, J ^a   Song, H P ^a   Xu, X Q ^a   Wei, H Y ^a   Jiao, C M ^a   Yang, S Y ^a   Song, H ^b   Zhu, Q S ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

^c NONE   (China)

Author keywords

Conduction band offset; GaN diamond heterojunction; Valence band offset; XPS

Indexed keywords

CONDUCTION BANDS; GALLIUM NITRIDE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; VALENCE BANDS;

CONDUCTION BAND OFFSET; ENERGY DISCONTINUITY; TYPE II HETERO JUNCTIONS; VALENCE BAND OFFSETS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 79957899079     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.04.118     Document Type: Article

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